Metal Induced Crystallization (MIC): It is a kind of SPC method but, compared to conventional SPC, it can achieve polysilicon under lower temperature (about 500°C - 600°C). This is because a thin metal layer is coated before crystallization anneal. The metal element is the key in lowering the activation energy of crystallization.

Cat-CVD: This method directly deposits poly-film without further thermal anneal. The deposition temperature has reportedly gone as low as 300°C. The growth mechanism involves the catalytic cracking reaction of SiH4-H2 mixture.

Laser anneal: This is the most popular method used currently. Excimer laser is used as an energy source to heat and melt a-Si with low Hydrogen content. It is later recrystallized as poly-film.

Capability for integrating driving circuit on glass substrate means slimmer peripheral dimension and cheaper cost.

Higher aperture ratio: Higher mobility means that we can achieve the pixel charging time by smaller-size TFT, so that contribute more pixel area for light transmission.

Vehicle for OLED: Higher mobility means ample current supply required by OLED device driving.

Module's compactness: Less PCB area required due to driver integrated on Glass